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FDP52N20 / FDPF52N20T N-Channel MOSFET
October 2007
UniFETTM
FDP52N20 / FDPF52N20T
N-Channel MOSFET
200V, 52A, 0.049 Features
* RDS(on) = 0.041 ( Typ.)@ VGS = 10V, ID = 26A * Low gate charge ( Typ. 49nC) * Low Crss ( Typ. 66pF) * Fast switching * 100% avalanche tested * Improve dv/dt capability * RoHS compliant
tm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
D
G
G DS
TO-220 FDP Series
GD S
TO-220F FDPF Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 357 2.86 -55 to +150 300 52 33 208 2520 52 35.7 4.5 38.5 0.3 FDP52N20 FDPF52N20T 200 30 52* 33* 208* Units V V A A mJ A mJ V/ns W W/oC
oC oC
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP52N20 0.35 0.5 62.5 FDPF52N20T 3.3 62.5
oC/W
Units
(c)2007 Fairchild Semiconductor Corporation FDP52N20 / FDPF52N20T Rev. A
1
www.fairchildsemi.com
FDP52N20 / FDPF52N20T N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FDP52N20 FDPF52N20T Device FDP52N20 FDPF52N20T Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25oC VDS = 200V, VGS = 0V VDS = 160V, TC = 125oC VGS = 30V, VDS = 0V 200 0.2 1 10 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 26A VDS = 40V, ID = 26A
(Note 4)
3.0 -
0.041 35
5.0 0.049 -
V S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 160V, ID = 52A VGS = 10V
(Note 4, 5)
VDS = 25V, VGS = 0V f = 1MHz
-
2230 540 66 49 19 24
2900 700 100 63 -
pF pF pF nC nC nC
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 100V, ID = 20A RG = 25
(Note 4, 5)
-
53 175 48 29
115 359 107 68
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 52A VGS = 0V, ISD = 52A dIF/dt = 100A/s
(Note 4)
-
162 1.3
52 204 1.5 -
A A V ns C
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.4mH, IAS = 52A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 52A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDP52N20 / FDPF52N20T Rev. A
2
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FDP52N20 / FDPF52N20T N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
2
Figure 2. Transfer Characteristics
ID, Drain Current [A]
10
1
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
10
2
150C
10
1
25C -55C
* Notes : 1. VDS = 40V 2. 250s Pulse Test
10
0
* Notes : 1. 250s Pulse Test 2. TC = 25C
10
-1
10
-1
10
0
10
1
10
0
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.12
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
RDS(ON) [], Drain-Source On-Resistance
0.08
VGS = 10V
0.06
IDR, Reverse Drain Current [A]
0.10
10
2
10
1
150 25
0.04
VGS = 20V
0.02
* Note : TJ = 25C
* Notes : 1. VGS = 0V 2. 250s Pulse Test
0.00 0 25 50 75 100 125 150
10 0.2
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
6000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
12
5000
VGS, Gate-Source Voltage [V]
10
VDS = 40V VDS = 100V VDS = 160V
Capacitances [pF]
4000
Coss Ciss
8
3000
6
2000
* Note ; 1. VGS = 0 V
4
1000
Crss
2. f = 1 MHz
2
* Note : ID = 52A
0 -1 10
10
0
10
1
0 0 10 20 30 40 50 60
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FDP52N20 / FDPF52N20T Rev. A
3
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FDP52N20 / FDPF52N20T N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
0.9
* Notes : 1. VGS = 0 V 2. ID = 250A
0.5
* Notes : 1. VGS = 10 V 2. ID = 26 A
0.8 -100
-50
0
50
100
150
200
0.0 -100
-50
0
50
100
150
200
TJ, Junction Tem perature [C ]
TJ, Junction Tem perature [C]
Figure 9-1. Maximum Safe Operating Area - FDP52N20
10
3
Figure 9-2. Maximum Safe Operating Area - FDPF52N20T
10
3
10 s
10
2
ID, Drain Current [A]
10
1
ID, Drain Current [A]
100 s 1 ms 10 ms 100 ms DC
Operation in This Area is Limited by R DS(on)
10
2
10 s 100 s 1 ms
10
1
10 ms
Operation in This Area is Limited by R DS(on)
100 ms DC
10
0
10
0
10
-1
* Notes : 1. TC = 25C 2. TJ = 150C 3. Single Pulse
10
-1
* Notes : 1. TC = 25C 2. TJ = 150C 3. Single Pulse
0
10
-2
10
0
10
1
10
2
10
-2
10
10
1
10
2
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
60
50
ID, Drain Current [A]
40
30
20
10
0 25
50
75
100
125
150
TC, Case Temperature [C]
FDP52N20 / FDPF52N20T Rev. A
4
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FDP52N20 / FDPF52N20T N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve - FDP52N20
ZJC(t), Thermal Response
D =0.5
10
-1
0.2 0.1 0.05 0.02
10
-2
PDM t1
* N o tes :
t2
0
0.01 single pulse
1 . Z JC (t) = 0.3 5 C /W M ax. 2 . D uty F actor, D =t 1 /t 2 3 . T JM - T C = P D M * Z JC (t)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u are W a ve P u lse D uration [se c]
Figure 11-2. Transient Thermal Response Curve - FDPF52N20T
D=0.5
ZJC(t), Thermal Response
10
0
0.2 0.1 0.05
10
-1
PDM t1 t2
0
0.02 0.01
* N otes :
1. Z JC (t) = 3.3 C /W M ax. 2. D uty Factor, D =t 1 /t 2 3. T JM - T C = P DM * Z JC (t)
single pulse
10
-2 -5 -4 -3 -2 -1 0 1
10
10
10
10
10
10
10
t 1 , Square W ave Pulse Duration [sec]
FDP52N20 / FDPF52N20T Rev. A
5
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FDP52N20 / FDPF52N20T N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP52N20 / FDPF52N20T Rev. A
6
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FDP52N20 / FDPF52N20T N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a te P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d
10V
IF M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lta g e D r o p
FDP52N20 / FDPF52N20T Rev. A
7
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FDP52N20 / FDPF52N20T N-Channel MOSFET
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
FDP52N20 / FDPF52N20T Rev. A
8
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FDP52N20 / FDPF52N20T N-Channel MOSFET
Mechanical Dimensions
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20]
4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
15.87 0.20
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FDP52N20 / FDPF52N20T Rev. A
9
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LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
No Identification Needed
Full Production
Obsolete
Not In Production
(c) 2007 Fairchild Semiconductor Corporation
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